Study of Theoretical development on Semiconductor Heterostructure
Keywords:
Heterostructure, Semiconductors, Lattice Constant, Band Gap, Doping Level.Abstract
In this paper, we studied the most commonly used heterostructure for two—dimensional transport is composed of the two semiconductors. GaAs and AlxGa1-xAs, which has nearly the same lattice parameter. In the latter material, a fraction (commonly x-0.3) of the Ga atoms in the GaAs lattice is replaced by AI atoms, thus keeping III-v ration the same. For x<0.45 the semiconductor AlxGa1-xAs has a direct band gap, arger than that of GaAs, being approximately proportional to the AI content; a widely used expression, due to Casey and Panish 16 (1978) is E gap-1.424 +1.247 xeV at room temperature, although slightly different values have been reported by other workers.
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